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Küresel Kuantum Nokta Yapının Elektronik Yapısı ve Bağlanma Enerjisi

Year 2017, Volume: 1 Issue: 1, 41 - 50, 03.05.2017
https://doi.org/10.29002/asujse.302748

Abstract

Bu çalışmada sonlu ve sonsuz sınırlandırıcı
potansiyele sahip küresel kuantum nokta yapının taban ve bazı uyarılmış enerji
seviyeleri ve dalga fonksiyonları hesaplandı. Bununla beraber taban ve çeşitli
uyarılmış durumlarının bağlanma enerjileri nokta yapının yarıçapına bağlı
olarak incelendi. Enerji öz değerlerini ve öz fonksiyonlarını hesaplamak için Kuantum
Genetik Algoritma ve Hartree-Fock Roothaan metodu kullanılmıştır. Sonuçlar
göstermiştir ki kuantum nokta yapının enerji seviyeleri üzerinde yarıçapın ve
sınırlandırıcı potansiyelin büyük etkisi vardır. Buna karşılık büyük nokta
yarıçaplarında sınırlandırıcı potansiyelin etkisinin ortadan kalktığı ve enerji
seviyelerinin hidrojen atomunun değerlerine gittiği görüldü.

References

  • [1] S. Saho, K.X. Guo, Z.H. Zhang, N.Li, C. Peng, Superlatt. Microstruct. 48 (2010) 541.
  • [2] B. Cakir, A. Ozmen, U. Atav, H. Yuksel, Y. Yakar, Int. J. Mod. Phys. C 18 (2007) 61.
  • [3] B. Cakir, A. Ozmen, U. Atav, H. Yuksel, Y. Yakar, Int. J. Mod. Phys. C 19 (2008) 599.
  • [4] Y.Yakar, B. Cakir, A. Ozmen, Int. J. Quant. Chem. 111 (2011) 4139.
  • [5] Y. Yakar, B. Cakir, A. Ozmen, Philosophical Magazine 95 (2015) 311.
  • [6] R. Khordad, H. Bahramiyan, International Journal of Modern Physics C 24 (2013) 1350041.
  • [7] C. Bose, C.K. Sarkar, Phys. Stat. Sol. (b) 218 (2000) 461.
  • [8] I. Al-Hayek, A.S. Sandouqa, Superlattices Microstructures 85 (2015) 216.
  • [9] N. Porras-Montenegro, S.T. Perez-Merchancano, Phys. Rev. B 46 (1992) 9780.
  • [10] E. Sadeghi, Physica E 41 (2009) 1319.
  • [11] Y. Yakar, B. Cakir, A. Ozmen, Computer Physics Communications 188 (2015) 88.
  • [12] B. Cakir, Y. Yakar, A. Ozmen, Journal Luminescence 132 (2012) 2659.
  • [13] B. Cakir, Y. Yakar, A. Ozmen, Physica B 458 (2015) 138.
  • [14] E.C. Niculescu, D. Bejan, Physica E 74 (2015) 51.
  • [15] E. Kasapoglu, F. Ungan, C.A. Duque, U. Yesilgul, M. E. Mora-Ramos, H. Sari, I. Sokmen, Physica E 61 (2014) 107.
  • [16] A. Mandal, S. Sarkar, A.P. Ghosh, M. Ghosh, Chemical Phys. 463 (2015) 149.
  • [17] S. Saha, S. Pal, J. Ganguly, M. Ghosh, Physica B 484 (2016) 109.
  • [18] U. Yesilgul, F. Ungan, E.B. Al, E. Kasapoglu, H. Sari, I. Sokmen, Opt. Quant. Electron. 48 (2016) 560.
  • [19] Y. Yakar, B. Cakir, A. Ozmen J. Lumin. 134 (2013) 778.
  • [20] A. Ozmen, B. Cakir, Y. Yakar, J. Lumin. 137 (2013) 259.
  • [21] A. Goyal, I. Kharati, A.K. Singh, M. Mohan, Indian J. Pure and Appl. Phys. 53 (2015) 604.
  • [22] Y. Yakar, B. Cakir, A. Ozmen, Superlattices and Microstructures 60 (2013) 389.
  • [23] S. Adachi, GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore, 1994).

Electronic Structure and Binding Energy of Spherical Quantum Dot

Year 2017, Volume: 1 Issue: 1, 41 - 50, 03.05.2017
https://doi.org/10.29002/asujse.302748

Abstract

In this study, we have calculated the energy states and the
wavefunctions of the spherical quantum dot with finite and infinite confining
potential. In addition, we have investigated the binding energies of the ground
and excited states of the spherical quantum dot as a function of dot radius. In
order to calculate the energy eigenvalues and the wavefunctions Quantum Genetic
Algorithm and Hartre-Fock Roothaan method have been employed. The results show
that dot radius and confinement potential has a great effect on the energy
states and binding energies. In large dot radii, the effect of confinement
potential on energy states is disappeared and energy states go to the energy
values of hydrogen atom.

References

  • [1] S. Saho, K.X. Guo, Z.H. Zhang, N.Li, C. Peng, Superlatt. Microstruct. 48 (2010) 541.
  • [2] B. Cakir, A. Ozmen, U. Atav, H. Yuksel, Y. Yakar, Int. J. Mod. Phys. C 18 (2007) 61.
  • [3] B. Cakir, A. Ozmen, U. Atav, H. Yuksel, Y. Yakar, Int. J. Mod. Phys. C 19 (2008) 599.
  • [4] Y.Yakar, B. Cakir, A. Ozmen, Int. J. Quant. Chem. 111 (2011) 4139.
  • [5] Y. Yakar, B. Cakir, A. Ozmen, Philosophical Magazine 95 (2015) 311.
  • [6] R. Khordad, H. Bahramiyan, International Journal of Modern Physics C 24 (2013) 1350041.
  • [7] C. Bose, C.K. Sarkar, Phys. Stat. Sol. (b) 218 (2000) 461.
  • [8] I. Al-Hayek, A.S. Sandouqa, Superlattices Microstructures 85 (2015) 216.
  • [9] N. Porras-Montenegro, S.T. Perez-Merchancano, Phys. Rev. B 46 (1992) 9780.
  • [10] E. Sadeghi, Physica E 41 (2009) 1319.
  • [11] Y. Yakar, B. Cakir, A. Ozmen, Computer Physics Communications 188 (2015) 88.
  • [12] B. Cakir, Y. Yakar, A. Ozmen, Journal Luminescence 132 (2012) 2659.
  • [13] B. Cakir, Y. Yakar, A. Ozmen, Physica B 458 (2015) 138.
  • [14] E.C. Niculescu, D. Bejan, Physica E 74 (2015) 51.
  • [15] E. Kasapoglu, F. Ungan, C.A. Duque, U. Yesilgul, M. E. Mora-Ramos, H. Sari, I. Sokmen, Physica E 61 (2014) 107.
  • [16] A. Mandal, S. Sarkar, A.P. Ghosh, M. Ghosh, Chemical Phys. 463 (2015) 149.
  • [17] S. Saha, S. Pal, J. Ganguly, M. Ghosh, Physica B 484 (2016) 109.
  • [18] U. Yesilgul, F. Ungan, E.B. Al, E. Kasapoglu, H. Sari, I. Sokmen, Opt. Quant. Electron. 48 (2016) 560.
  • [19] Y. Yakar, B. Cakir, A. Ozmen J. Lumin. 134 (2013) 778.
  • [20] A. Ozmen, B. Cakir, Y. Yakar, J. Lumin. 137 (2013) 259.
  • [21] A. Goyal, I. Kharati, A.K. Singh, M. Mohan, Indian J. Pure and Appl. Phys. 53 (2015) 604.
  • [22] Y. Yakar, B. Cakir, A. Ozmen, Superlattices and Microstructures 60 (2013) 389.
  • [23] S. Adachi, GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore, 1994).
There are 23 citations in total.

Details

Subjects Engineering
Journal Section Research Article
Authors

Fatma Yilmazer

Yusuf Yakar

Bekir Cakir

Ayhan Ozmen

Publication Date May 3, 2017
Submission Date March 30, 2017
Acceptance Date April 21, 2017
Published in Issue Year 2017Volume: 1 Issue: 1

Cite

APA Yilmazer, F., Yakar, Y., Cakir, B., Ozmen, A. (2017). Electronic Structure and Binding Energy of Spherical Quantum Dot. Aksaray University Journal of Science and Engineering, 1(1), 41-50. https://doi.org/10.29002/asujse.302748

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